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Transistors(2488)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Voltage - Test | Voltage - Breakdown (V(BR)GSS) | Current - Drain (Idss) @ Vds (Vgs=0) | Voltage - Cutoff (VGS off) @ Id | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Current Drain (Id) - Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
2SA1837,NSEIKIF(J | - |  |
1887 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1837 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 230 V | 1 A | 1µA (ICBO) | PNP | 1.5V @ 50mA, 500mA | 100 @ 100mA, 5V | 70MHz | ||||||||||||||||||||||||||||||
 |
TPC6011(TE85L,F,M) | - | |
5591 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TPC6011 | MOSFET (Metal Oxide) | VS-6 (2.9x2.8) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 6A (Ta) | 4.5V, 10V | 20mOhm @ 3A, 10V | 2.5V @ 1mA | 14 nC @ 10 V | ±20V | 640 pF @ 10 V | - | 700mW (Ta) | |||||||||||||||||||||||||
 |
TK32A12N1,S4X | 1.4000 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK32A12 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 120 V | 32A (Tc) | 10V | 13.8mOhm @ 16A, 10V | 4V @ 500µA | 34 nC @ 10 V | ±20V | 2000 pF @ 60 V | - | 30W (Tc) | |||||||||||||||||||||||||
|
2SC5171(ONK,Q,M) | - | |
9307 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SC5171 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 180 V | 2 A | 5µA (ICBO) | NPN | 1V @ 100mA, 1A | 100 @ 100mA, 5V | 200MHz | ||||||||||||||||||||||||||||||
 |
TW027N65C,S1F | 22.7000 | |
4982 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 58A (Tc) | 18V | 37mOhm @ 29A, 18V | 5V @ 3mA | 65 nC @ 18 V | +25V, -10V | 2288 pF @ 400 V | - | 156W (Tc) | ||||||||||||||||||||||||||
|
TK110A65Z,S4X | 4.2300 | |
51 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK110A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 45W (Tc) | |||||||||||||||||||||||||
 |
3SK291(TE85L,F) | - | |
4341 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 12.5 V | Surface Mount | SC-61AA | 3SK291 | 800MHz | MOSFET | SMQ | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel Dual Gate | 30mA | 10 mA | - | 22.5dB | 2.5dB | 6 V | ||||||||||||||||||||||||||||
 |
RN4906,LF | 0.2800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4906 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 4.7kOhms | 47kOhms | ||||||||||||||||||||||||||||
 |
TP89R103NL,LQ | 0.6600 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | TP89R103 | MOSFET (Metal Oxide) | 8-SOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 15A (Tc) | 4.5V, 10V | 9.1mOhm @ 7.5A, 10V | 2.3V @ 100µA | 9.8 nC @ 10 V | ±20V | 820 pF @ 15 V | - | 1W (Tc) | |||||||||||||||||||||||||
 |
SSM3K7002CFU,LF | 0.1800 | |
33 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SSM3K7002 | MOSFET (Metal Oxide) | USM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 60 V | 170mA (Ta) | 4.5V, 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35 nC @ 4.5 V | ±20V | 17 pF @ 10 V | - | 150mW (Ta) | |||||||||||||||||||||||||
 |
SSM6N815R,LF | 0.4500 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6N815 | MOSFET (Metal Oxide) | 1.8W (Ta) | 6-TSOP-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 100V | 2A (Ta) | 103mOhm @ 2A, 10V | 2.5V @ 100µA | 3.1nC @ 4.5V | 290pF @ 15V | Logic Level Gate, 4V Drive | |||||||||||||||||||||||||||
 |
SSM3J372R,LF | 0.4400 | |
334 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-23-3 Flat Leads | SSM3J372 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 6A (Ta) | 1.8V, 10V | 42mOhm @ 5A, 10V | 1.2V @ 1mA | 8.2 nC @ 4.5 V | +12V, -6V | 560 pF @ 15 V | - | 1W (Ta) | |||||||||||||||||||||||||
 |
SSM6J505NU,LF | 0.5100 | |
19 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | SSM6J505 | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 12 V | 12A (Ta) | 1.2V, 4.5V | 12mOhm @ 4A, 4.5V | 1V @ 1mA | 37.6 nC @ 4.5 V | ±6V | 2700 pF @ 10 V | - | 1.25W (Ta) | |||||||||||||||||||||||||
 |
SSM6J216FE,LF | 0.4900 | |
2168 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-563, SOT-666 | SSM6J216 | MOSFET (Metal Oxide) | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | P-Channel | 12 V | 4.8A (Ta) | 1.5V, 4.5V | 32mOhm @ 3.5A, 4.5V | 1V @ 1mA | 12.7 nC @ 4.5 V | ±8V | 1040 pF @ 12 V | - | 700mW (Ta) | |||||||||||||||||||||||||
 |
TPC8A06-H(TE12LQM) | - | |
8606 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | - | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8A06 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | TPC8A06HTE12LQM | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 12A (Ta) | 4.5V, 10V | 10.1mOhm @ 6A, 10V | 2.3V @ 1mA | 19 nC @ 10 V | ±20V | 1800 pF @ 10 V | Schottky Diode (Body) | - | |||||||||||||||||||||||||
 |
TPCP8001-H(TE85LFM | - | |
4459 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TPCP8001 | MOSFET (Metal Oxide) | PS-8 (2.9x2.4) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 7.2A (Ta) | 4.5V, 10V | 16mOhm @ 3.6A, 10V | 2.3V @ 1mA | 11 nC @ 10 V | ±20V | 640 pF @ 10 V | - | 1W (Ta), 30W (Tc) | ||||||||||||||||||||||||||
 |
2SJ610(TE16L1,NQ) | - | |
7676 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SJ610 | MOSFET (Metal Oxide) | PW-MOLD | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 250 V | 2A (Ta) | 10V | 2.55Ohm @ 1A, 10V | 3.5V @ 1mA | 24 nC @ 10 V | ±20V | 381 pF @ 10 V | - | 20W (Ta) | ||||||||||||||||||||||||||
 |
2SK208-GR(TE85L,F) | 0.4900 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SK208 | 100 mW | SC-59 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 8.2pF @ 10V | 50 V | 2.6 mA @ 10 V | 400 mV @ 100 nA | 6.5 mA | ||||||||||||||||||||||||||||||
 |
TK10A60D(STA4,Q,M) | - | |
1128 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK10A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | TK10A60DSTA4QM | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 600 V | 10A (Ta) | 10V | 750mOhm @ 5A, 10V | 4V @ 1mA | 25 nC @ 10 V | ±30V | 1350 pF @ 25 V | - | 45W (Tc) | ||||||||||||||||||||||||
|
TPC8032-H(TE12LQM) | - | |
9260 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8032 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 15A (Ta) | 6.5mOhm @ 7.5A, 10V | 2.5V @ 1mA | 33 nC @ 10 V | 2846 pF @ 10 V | - | - | ||||||||||||||||||||||||||||
|
TK8S06K3L(T6L1,NQ) | 1.2600 | |
4739 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK8S06 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 60 V | 8A (Ta) | 6V, 10V | 54mOhm @ 4A, 10V | 3V @ 1mA | 10 nC @ 10 V | ±20V | 400 pF @ 10 V | - | 25W (Tc) | |||||||||||||||||||||||||
 |
TK3P50D,RQ(S | 1.1700 | |
6966 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK3P50 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 500 V | 3A (Ta) | 10V | 3Ohm @ 1.5A, 10V | 4.4V @ 1mA | 7 nC @ 10 V | ±30V | 280 pF @ 25 V | - | 60W (Tc) | |||||||||||||||||||||||||
|
TK10A60W,S4X | 1.6339 | |
3281 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | Through Hole | TO-220-3 Full Pack | TK10A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | TK10A60WS4X | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 720 pF @ 300 V | - | 30W (Tc) | |||||||||||||||||||||||||
 |
RN2303,LF | 0.1800 | |
200 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN2303 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200 MHz | 22 kOhms | 22 kOhms | ||||||||||||||||||||||||||||
|
RN2907FE,LXHF(CT | 0.3800 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN2907 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 10kOhms | 47kOhms | |||||||||||||||||||||||||||||
|
2SK880-Y(TE85L,F) | 0.5600 | |
42 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SK880 | 100 mW | USM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 13pF @ 10V | 50 V | 1.2 mA @ 10 V | 1.5 V @ 100 nA | |||||||||||||||||||||||||||||||
 |
TPH1110ENH,L1Q | 0.6941 | |
3205 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH1110 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 200 V | 7.2A (Ta) | 10V | 114mOhm @ 3.6A, 10V | 4V @ 200µA | 7 nC @ 10 V | ±20V | 600 pF @ 100 V | - | 1.6W (Ta), 42W (Tc) | |||||||||||||||||||||||||
|
TK58A06N1,S4X | 1.3300 | |
46 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK58A06 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 58A (Tc) | 10V | 5.4mOhm @ 29A, 10V | 4V @ 500µA | 46 nC @ 10 V | ±20V | 3400 pF @ 30 V | - | 35W (Tc) | |||||||||||||||||||||||||
 |
RN1710JE(TE85L,F) | 0.4000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-553 | RN1710 | 100mW | ESV | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250MHz | 4.7kOhms | - | |||||||||||||||||||||||||||||
 |
TPN2R903PL,L1Q | 0.8300 | |
39 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPN2R903 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 70A (Tc) | 4.5V, 10V | 2.9mOhm @ 35A, 10V | 2.1V @ 200µA | 26 nC @ 10 V | ±20V | 2300 pF @ 15 V | - | 630mW (Ta), 75W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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