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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Tolerance | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SA1425-Y,T2F(J | - |  |
5109 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | SC-71 | 2SA1425 | 1 W | MSTM | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | PNP | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | |||||||||||||||||||||||||||||||
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RN4983FE,LF(CT | 0.2700 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4983 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250MHz | 22kOhms | 22kOhms | |||||||||||||||||||||||||||||
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2SA2154CT-GR,L3F | 0.3200 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | 2SA2154 | 100 mW | CST3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 50 V | 100 mA | 100nA (ICBO) | PNP | 300mV @ 10mA, 100mA | 200 @ 2mA, 6V | 80MHz | ||||||||||||||||||||||||||||||
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RN1117(T5L,F,T) | - | |
6824 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Discontinued at SIC | Surface Mount | SC-75, SOT-416 | RN1117 | 100 mW | SSM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 250 MHz | 10 kOhms | 4.7 kOhms | |||||||||||||||||||||||||||||
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RN2911FE(TE85L,F) | 0.3500 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN2911 | 100mW | ES6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200MHz | 10kOhms | - | |||||||||||||||||||||||||||||
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TTA003,L1NQ(O | 0.6900 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TTA003 | 10 W | PW-MOLD | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0075 | 2,000 | 80 V | 3 A | 100nA (ICBO) | PNP | 500mV @ 100mA, 1A | 100 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||||||
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TK110E10PL,S1X | 1.3400 | |
78 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-220-3 | TK110E10 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 42A (Tc) | 4.5V, 10V | 10.7mOhm @ 21A, 10V | 2.5V @ 300µA | 33 nC @ 10 V | ±20V | 2040 pF @ 50 V | - | 87W (Tc) | ||||||||||||||||||||||||||
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2SC2655-Y,T6KEHF(M | - | |
1327 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2655 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | NPN | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | |||||||||||||||||||||||||||||||
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SSM6K518NU,LF | 0.4100 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-WDFN Exposed Pad | SSM6K518 | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 20 V | 6A (Ta) | 1.5V, 4.5V | 33mOhm @ 4A, 4.5V | 1V @ 1mA | 3.6 nC @ 4.5 V | ±8V | 410 pF @ 10 V | - | 1.25W (Ta) | ||||||||||||||||||||||||||
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CRZ24(TE85L,Q,M) | 0.1740 | |
1286 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | ±10% | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | CRZ24 | 700 mW | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0050 | 3,000 | 1 V @ 200 mA | 10 µA @ 17 V | 24 V | 30 Ohms | ||||||||||||||||||||||||||||||||
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2SA1930,CKQ(J | - | |
9881 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1930 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 180 V | 2 A | 5µA (ICBO) | PNP | 1V @ 100mA, 1A | 100 @ 100mA, 5V | 200MHz | |||||||||||||||||||||||||||||||
|
CRS30I30A(TE85L,QM | 0.5000 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | CRS30I30 | Schottky | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 490 mV @ 3 A | 100 µA @ 30 V | 150°C (Max) | 3A | 82pF @ 10V, 1MHz | |||||||||||||||||||||||||||||||
 |
2SC5354,XGQ(O | - | |
1637 | 0.00000000 | Toshiba Semiconductor and Storage | * | Tube | Active | 2SC5354 | download | RoHS Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | ||||||||||||||||||||||||||||||||||||||||||
 |
RN2102MFV,L3XHF(CT | 0.3400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2102 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 10 kOhms | 10 kOhms | ||||||||||||||||||||||||||||||
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2SC3326-A,LF | 0.4000 | |
78 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SC3326 | 150 mW | TO-236 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 20 V | 300 mA | 100nA (ICBO) | NPN | 100mV @ 3mA, 30mA | 200 @ 4mA, 2V | 30MHz | ||||||||||||||||||||||||||||||
 |
RN1415(TE85L,F) | 0.3400 | |
29 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1415 | 200 mW | S-Mini | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 2.2 kOhms | 10 kOhms | |||||||||||||||||||||||||||||
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CMS16(TE12L,Q,M) | 0.6600 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-128 | CMS16 | Schottky | M-FLAT (2.4x3.8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 550 mV @ 3 A | 200 µA @ 40 V | -40°C ~ 150°C | 3A | - | |||||||||||||||||||||||||||||||
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SSM6L12TU,LF | 0.5100 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6L12 | MOSFET (Metal Oxide) | 500mW | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N and P-Channel | 30V, 20V | 500mA (Ta) | 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V | 1.1V @ 100µA | - | 245pF @ 10V, 218pF @ 10V | - | ||||||||||||||||||||||||||||
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RN49A1(T5L,F,T) | - | |
6337 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN49A1 | 200mW | US6 | - | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 2.2kOhms | 47kOhms | ||||||||||||||||||||||||||||||
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2SA1429-Y(T2OMI,FM | - | |
3230 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | SC-71 | 2SA1429 | 1 W | MSTM | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 80 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 80MHz | |||||||||||||||||||||||||||||||
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RN1971FE(TE85L,F) | - | |
2787 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOT-563, SOT-666 | RN1971 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250MHz | 10kOhms | - | ||||||||||||||||||||||||||||||
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TPH1R204PL1,LQ | 1.6600 | |
16 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-SOP Advance (5x5.75) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 150A (Tc) | 4.5V, 10V | 1.24mOhm @ 50A, 10V | 2.4V @ 500µA | 74 nC @ 10 V | ±20V | 7200 pF @ 20 V | - | 960mW (Ta), 170W (Tc) | ||||||||||||||||||||||||||||
 |
TPCC8A01-H(TE12LQM | - | |
4142 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSV-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | TPCC8A01 | MOSFET (Metal Oxide) | 8-TSON Advance (3.3x3.3) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 21A (Ta) | 4.5V, 10V | 9.9mOhm @ 10.5A, 10V | 2.3V @ 1mA | 20 nC @ 10 V | ±20V | 1900 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | |||||||||||||||||||||||||||
 |
RN2304,LF | 0.1800 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN2304 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200 MHz | 47 kOhms | 47 kOhms | ||||||||||||||||||||||||||||||
 |
2SK3342(TE16L1,NQ) | - | |
3368 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SK3342 | MOSFET (Metal Oxide) | PW-MOLD | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 250 V | 4.5A (Ta) | 10V | 1Ohm @ 2.5A, 10V | 3.5V @ 1mA | 10 nC @ 10 V | ±20V | 440 pF @ 10 V | - | 20W (Tc) | |||||||||||||||||||||||||||
|
RN2415,LXHF | 0.3400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2415 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200 MHz | 2.2 kOhms | 10 kOhms | ||||||||||||||||||||||||||||||
|
RN2312(TE85L,F) | 0.2700 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN2312 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200 MHz | 22 kOhms | ||||||||||||||||||||||||||||||
|
TK10A60W,S4VX | 2.7800 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK10A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | - | 30W (Tc) | ||||||||||||||||||||||||||
|
TK14V65W,LQ | 3.4800 | |
2719 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 650 V | 13.7A (Ta) | 10V | 280mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 139W (Tc) | |||||||||||||||||||||||||||
 |
TRS12N65FB,S1Q | 4.9600 | |
55 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-247-3 | TRS12N65 | SiC (Silicon Carbide) Schottky | TO-247 | - | 1 (Unlimited) | 264-TRS12N65FBS1Q | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 6A (DC) | 1.6 V @ 6 A | 0 ns | 30 µA @ 650 V | 175°C |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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