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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Current - Max | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Diode Type | Voltage - Peak Reverse (Max) | Current - Collector Cutoff (Max) | Resistance @ If, F | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
1SS387CT,L3F | 0.2400 |  |
129 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-882 | 1SS387 | Standard | CST2 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 10,000 | Small Signal =< 200mA (Io), Any Speed | 80 V | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 150°C (Max) | 100mA | 0.5pF @ 0V, 1MHz | ||||||||||||||||||||||||||||||
 |
RN2904FE,LXHF(CT | 0.3800 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN2904 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 47kOhms | 47kOhms | ||||||||||||||||||||||||||||||
 |
2SC6010(T2MITUM,FM | - | |
5872 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | SC-71 | 2SC6010 | 1 W | MSTM | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | 600 V | 1 A | 100µA (ICBO) | NPN | 1V @ 75mA, 600mA | 100 @ 100mA, 5V | - | |||||||||||||||||||||||||||||||
 |
TPW4R008NH,L1Q | 2.7900 | |
4510 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerWDFN | TPW4R008 | MOSFET (Metal Oxide) | 8-DSOP Advance | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 80 V | 116A (Tc) | 10V | 4mOhm @ 50A, 10V | 4V @ 1mA | 59 nC @ 10 V | ±20V | 5300 pF @ 40 V | - | 800mW (Ta), 142W (Tc) | ||||||||||||||||||||||||||
 |
RN1101ACT(TPL3) | - | |
6910 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN1101 | 100 mW | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 50 V | 80 mA | 500nA | NPN - Pre-Biased | 150mV @ 500µA, 5mA | 30 @ 10mA, 5V | 4.7 kOhms | 4.7 kOhms | |||||||||||||||||||||||||||||||
 |
RN2107MFV,L3F | - | |
3225 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Active | Surface Mount | SOT-723 | RN2107 | 150 mW | VESM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 10 kOhms | 47 kOhms | ||||||||||||||||||||||||||||||
 |
2SJ610(TE16L1,NQ) | - | |
7676 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SJ610 | MOSFET (Metal Oxide) | PW-MOLD | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 250 V | 2A (Ta) | 10V | 2.55Ohm @ 1A, 10V | 3.5V @ 1mA | 24 nC @ 10 V | ±20V | 381 pF @ 10 V | - | 20W (Ta) | |||||||||||||||||||||||||||
 |
RN4910,LF | 0.2800 | |
7429 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4910 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200MHz | 4.7kOhms | - | |||||||||||||||||||||||||||||
 |
SSM6J503NU,LF | 0.4600 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | SSM6J503 | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 6A (Ta) | 1.5V, 4.5V | 32.4mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8 nC @ 10 V | ±8V | 840 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||||||
 |
SSM3J372R,LF | 0.4400 | |
334 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-23-3 Flat Leads | SSM3J372 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 6A (Ta) | 1.8V, 10V | 42mOhm @ 5A, 10V | 1.2V @ 1mA | 8.2 nC @ 4.5 V | +12V, -6V | 560 pF @ 15 V | - | 1W (Ta) | ||||||||||||||||||||||||||
 |
TK13E25D,S1X(S | 2.2900 | |
4902 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK13E25 | MOSFET (Metal Oxide) | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 250 V | 13A (Ta) | 10V | 250mOhm @ 6.5A, 10V | 3.5V @ 1mA | 25 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 102W (Tc) | ||||||||||||||||||||||||||
 |
JDP4P02AT(TE85L) | - | |
5762 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | 4-SMD, No Lead | JDP4P02 | CST4 (1.2x0.8) | download | 1 (Unlimited) | EAR99 | 8541.10.0070 | 4,000 | 50 mA | 0.4pF @ 1V, 1MHz | PIN - 2 Independent | 30V | 1.5Ohm @ 10mA, 100MHz | |||||||||||||||||||||||||||||||||||
 |
TPCP8001-H(TE85LFM | - | |
4459 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TPCP8001 | MOSFET (Metal Oxide) | PS-8 (2.9x2.4) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 7.2A (Ta) | 4.5V, 10V | 16mOhm @ 3.6A, 10V | 2.3V @ 1mA | 11 nC @ 10 V | ±20V | 640 pF @ 10 V | - | 1W (Ta), 30W (Tc) | |||||||||||||||||||||||||||
|
SSM3J56ACT,L3F | 0.3900 | |
32 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-101, SOT-883 | SSM3J56 | MOSFET (Metal Oxide) | CST3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | P-Channel | 20 V | 1.4A (Ta) | 1.2V, 4.5V | 390mOhm @ 800mA, 4.5V | 1V @ 1mA | 1.6 nC @ 4.5 V | ±8V | 100 pF @ 10 V | - | 500mW (Ta) | ||||||||||||||||||||||||||
 |
TP89R103NL,LQ | 0.6600 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | TP89R103 | MOSFET (Metal Oxide) | 8-SOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 15A (Tc) | 4.5V, 10V | 9.1mOhm @ 7.5A, 10V | 2.3V @ 100µA | 9.8 nC @ 10 V | ±20V | 820 pF @ 15 V | - | 1W (Tc) | ||||||||||||||||||||||||||
 |
SSM3K7002CFU,LF | 0.1800 | |
33 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SSM3K7002 | MOSFET (Metal Oxide) | USM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 60 V | 170mA (Ta) | 4.5V, 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35 nC @ 4.5 V | ±20V | 17 pF @ 10 V | - | 150mW (Ta) | ||||||||||||||||||||||||||
 |
RN2402S,LF(D | - | |
4226 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2402 | 200 mW | S-Mini | download | 1 (Unlimited) | RN2402SLF(D | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200 MHz | 10 kOhms | 10 kOhms | |||||||||||||||||||||||||||||
 |
TPN30008NH,LQ | 0.9000 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN30008 | MOSFET (Metal Oxide) | 8-TSON Advance (3.3x3.3) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 80 V | 9.6A (Tc) | 10V | 30mOhm @ 4.8A, 10V | 4V @ 100µA | 11 nC @ 10 V | ±20V | 920 pF @ 40 V | - | 700mW (Ta), 27W (Tc) | ||||||||||||||||||||||||||
|
SSM6J216FE,LF | 0.4900 | |
2168 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-563, SOT-666 | SSM6J216 | MOSFET (Metal Oxide) | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | P-Channel | 12 V | 4.8A (Ta) | 1.5V, 4.5V | 32mOhm @ 3.5A, 4.5V | 1V @ 1mA | 12.7 nC @ 4.5 V | ±8V | 1040 pF @ 12 V | - | 700mW (Ta) | ||||||||||||||||||||||||||
 |
TPC8A06-H(TE12LQM) | - | |
8606 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | - | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8A06 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | TPC8A06HTE12LQM | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 12A (Ta) | 4.5V, 10V | 10.1mOhm @ 6A, 10V | 2.3V @ 1mA | 19 nC @ 10 V | ±20V | 1800 pF @ 10 V | Schottky Diode (Body) | - | ||||||||||||||||||||||||||
|
TK12P50W,RQ | 2.0000 | |
6704 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 500 V | 11.5A (Ta) | 10V | 340mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 100W (Tc) | |||||||||||||||||||||||||||
|
TTB1020B,S4X(S | - | |
8142 | 0.00000000 | Toshiba Semiconductor and Storage | * | Tube | Active | TTB1020 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | ||||||||||||||||||||||||||||||||||||||||||
 |
TPCA8009-H(TE12L,Q | - | |
7100 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8009 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 150 V | 7A (Ta) | 10V | 350mOhm @ 3.5A, 10V | 4V @ 1mA | 10 nC @ 10 V | ±20V | 600 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | |||||||||||||||||||||||||||
 |
TK10A60E,S5X | - | |
2076 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK10A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 10A (Ta) | 10V | 750mOhm @ 5A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±30V | 1300 pF @ 25 V | - | 45W (Tc) | ||||||||||||||||||||||||||
 |
TPCP8005-H(TE85L,F | - | |
2162 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSV-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TPCP8005 | MOSFET (Metal Oxide) | PS-8 (2.9x2.4) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 11A (Ta) | 4.5V, 10V | 12.9mOhm @ 5.5A, 10V | 2.5V @ 1mA | 20 nC @ 10 V | ±20V | 2150 pF @ 10 V | - | 840mW (Ta) | |||||||||||||||||||||||||||
|
TK25E06K3,S1X(S | - | |
4655 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 | TK25E06 | MOSFET (Metal Oxide) | TO-220-3 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 25A (Ta) | 18mOhm @ 12.5A, 10V | - | 29 nC @ 10 V | - | 60W (Tc) | |||||||||||||||||||||||||||||
|
2SC5886A,L1XHQ(O | - | |
7632 | 0.00000000 | Toshiba Semiconductor and Storage | * | Tape & Reel (TR) | Active | 2SC5886 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | ||||||||||||||||||||||||||||||||||||||||||
 |
TK16C60W,S1VQ | - | |
7901 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TK16C60 | MOSFET (Metal Oxide) | I2PAK | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 130W (Tc) | ||||||||||||||||||||||||||
|
SSM6J502NU,LF | 0.4800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | SSM6J502 | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 6A (Ta) | 1.5V, 4.5V | 23.1mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8 nC @ 4.5 V | ±8V | 1800 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||||||
 |
TRS20N65FB,S1Q | 6.4400 | |
9973 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-247-3 | TRS20N65 | SiC (Silicon Carbide) Schottky | TO-247 | - | 1 (Unlimited) | 264-TRS20N65FBS1Q | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 10A (DC) | 1.6 V @ 10 A | 0 ns | 50 µA @ 650 V | 175°C |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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