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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Current - Max | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Diode Type | Voltage - Peak Reverse (Max) | Current - Collector Cutoff (Max) | Resistance @ If, F | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
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RN1105ACT(TPL3) | - | ![]() |
7215 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN1105 | 100 mW | CST3 | - | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 50 V | 80 mA | 500nA | NPN - Pre-Biased | 150mV @ 250µA, 5mA | 80 @ 10mA, 5V | 2.2 kOhms | 47 kOhms | ||||||||||||||||||||||||||||||||||||||
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S1PA7[UD] | - | ![]() |
1361 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tray | Active | - | 1 (Unlimited) | 190-S1PA7[UD] | EAR99 | 8541.29.0095 | 100 | ||||||||||||||||||||||||||||||||||||||||||||||||||
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RN1109,LF(CT | 0.2000 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1109 | 100 mW | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250 MHz | 47 kOhms | 22 kOhms | ||||||||||||||||||||||||||||||||||||
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2SC2229-Y,F(J | - | ![]() |
5348 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2229 | 800 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 150 V | 50 mA | 100nA (ICBO) | NPN | 500mV @ 1mA, 10mA | 70 @ 10mA, 5V | 120MHz | ||||||||||||||||||||||||||||||||||||||
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CLS02(TE16R,Q) | - | ![]() |
9054 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Surface Mount | L-FLAT™ | CLS02 | Schottky | L-FLAT™ (4x5.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 550 mV @ 10 A | 1 mA @ 40 V | -40°C ~ 125°C | 10A | 420pF @ 10V, 1MHz | |||||||||||||||||||||||||||||||||||||||
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2SA1680,T6F(J | - | ![]() |
4464 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1680 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 120 @ 100mA, 2V | 100MHz | ||||||||||||||||||||||||||||||||||||||
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RN1113ACT(TPL3) | 0.3400 | ![]() |
9 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-101, SOT-883 | RN1113 | 100 mW | CST3 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 50 V | 80 mA | 100nA (ICBO) | NPN - Pre-Biased | 150mV @ 250µA, 5mA | 120 @ 1mA, 5V | 47 kOhms | ||||||||||||||||||||||||||||||||||||||
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TPN4R303NL,L1Q | 0.8900 | ![]() |
4 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN4R303 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 40A (Tc) | 4.5V, 10V | 4.3mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8 nC @ 10 V | ±20V | 1400 pF @ 15 V | - | 700mW (Ta), 34W (Tc) | |||||||||||||||||||||||||||||||||
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RN2309(TE85L,F) | 0.2700 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN2309 | 100 mW | SC-70 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200 MHz | 47 kOhms | 22 kOhms | ||||||||||||||||||||||||||||||||||||
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2SC5198-O(S1,E | - | ![]() |
4257 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 2SC5198 | 100 W | TO-3P(N) | download | RoHS Compliant | 1 (Unlimited) | 2SC5198-O(S1E | EAR99 | 8541.29.0075 | 25 | 140 V | 10 A | 5µA (ICBO) | NPN | 2V @ 700mA, 7A | 55 @ 1A, 5V | 30MHz | ||||||||||||||||||||||||||||||||||||
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2SC2655-Y(HIT,F,M) | - | ![]() |
8275 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2655 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | NPN | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||||||||||||||
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GT10G131(TE12L,Q) | - | ![]() |
4336 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | GT10G131 | Standard | 1 W | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | - | - | 400 V | 200 A | 2.3V @ 4V, 200A | - | 3.1µs/2µs | |||||||||||||||||||||||||||||||||||||
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TK5A60W5,S5VX | 1.5900 | ![]() |
7625 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 4.5A (Ta) | 10V | 950mOhm @ 2.3A, 10V | 4.5V @ 230µA | 11.5 nC @ 10 V | ±30V | 370 pF @ 300 V | - | 30W (Tc) | ||||||||||||||||||||||||||||||||||
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2SC4116-BL,LXHF | 0.3300 | ![]() |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | NPN | 250mV @ 10mA, 100mA | 350 @ 2mA, 6V | 80MHz | |||||||||||||||||||||||||||||||||||||||
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2SK2231(TE16R1,NQ) | - | ![]() |
1483 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SK2231 | MOSFET (Metal Oxide) | PW-MOLD | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 60 V | 5A (Ta) | 4V, 10V | 160mOhm @ 2.5A, 10V | 2V @ 1mA | 12 nC @ 10 V | ±20V | 370 pF @ 10 V | - | 20W (Tc) | |||||||||||||||||||||||||||||||||
TK1K0A60F,S4X | 1.1100 | ![]() |
68 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK1K0A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 7.5A (Ta) | 10V | 1Ohm @ 3.8A, 10V | 4V @ 770µA | 24 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 40W (Tc) | ||||||||||||||||||||||||||||||||||
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1SS272TE85LF | 0.4900 | ![]() |
11 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-61AA | 1SS272 | Standard | SC-61B | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 2 Independent | 80 V | 100mA | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | |||||||||||||||||||||||||||||||||||||
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JDP2S08SC(TPL3) | 0.4800 | ![]() |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | 0201 (0603 Metric) | JDP2S08 | SC2 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 10,000 | 50 mA | 0.4pF @ 1V, 1MHz | PIN - Single | 30V | 1.5Ohm @ 10mA, 100MHz | |||||||||||||||||||||||||||||||||||||||||
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2SA1837,YHF(J | - | ![]() |
3098 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1837 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 230 V | 1 A | 1µA (ICBO) | PNP | 1.5V @ 50mA, 500mA | 100 @ 100mA, 5V | 70MHz | ||||||||||||||||||||||||||||||||||||||
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TPC8115(TE12L,Q,M) | - | ![]() |
7961 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8115 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 10A (Ta) | 1.8V, 4.5V | 10mOhm @ 5A, 4.5V | 1.2V @ 200µA | 115 nC @ 5 V | ±8V | 9130 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||||||||||||||
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TJ50S06M3L(T6L1,NQ | 1.9400 | ![]() |
1 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ50S06 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 60 V | 50A (Ta) | 6V, 10V | 13.8mOhm @ 25A, 10V | 3V @ 1mA | 124 nC @ 10 V | +10V, -20V | 6290 pF @ 10 V | - | 90W (Tc) | |||||||||||||||||||||||||||||||||
CRH01(TE85L,Q,M) | 0.5200 | ![]() |
54 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | CRH01 | Standard | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | 980 mV @ 1 A | 35 ns | 10 µA @ 200 V | -40°C ~ 150°C | 1A | - | ||||||||||||||||||||||||||||||||||||||
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2SA1930,ONKQ(J | - | ![]() |
7793 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1930 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 180 V | 2 A | 5µA (ICBO) | PNP | 1V @ 100mA, 1A | 100 @ 100mA, 5V | 200MHz | ||||||||||||||||||||||||||||||||||||||
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RN2107CT(TPL3) | - | ![]() |
2801 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN2107 | 50 mW | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 20 V | 50 mA | 500nA | PNP - Pre-Biased | 150mV @ 250µA, 5mA | 120 @ 10mA, 5V | 10 kOhms | 47 kOhms | ||||||||||||||||||||||||||||||||||||||
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TJ10S04M3L,LXHQ | 0.9500 | ![]() |
4099 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ10S04 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 40 V | 10A (Ta) | 6V, 10V | 44mOhm @ 5A, 10V | 3V @ 1mA | 19 nC @ 10 V | +10V, -20V | 930 pF @ 10 V | - | 27W (Tc) | ||||||||||||||||||||||||||||||||||
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TK62J60W,S1VQ | 16.3700 | ![]() |
20 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TK62J60 | MOSFET (Metal Oxide) | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 600 V | 61.8A (Ta) | 10V | 38mOhm @ 30.9A, 10V | 3.7V @ 3.1mA | 180 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | |||||||||||||||||||||||||||||||||
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RN1109,LXHF(CT | 0.3300 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1109 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250 MHz | 47 kOhms | 22 kOhms | |||||||||||||||||||||||||||||||||||||
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RN1402S,LF | - | ![]() |
4581 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1402 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 10 kOhms | 10 kOhms | |||||||||||||||||||||||||||||||||||||
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XPQ1R004PB,LXHQ | 3.0000 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerBSFN | XPQ1R004 | MOSFET (Metal Oxide) | L-TOGL™ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 40 V | 200A (Ta) | 6V, 10V | 1mOhm @ 100A, 10V | 3V @ 500µA | 84 nC @ 10 V | ±20V | 6890 pF @ 10 V | - | 230W (Tc) | |||||||||||||||||||||||||||||||||
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TK12J60U(F) | - | ![]() |
9902 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSII | Tray | Obsolete | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TK12J60 | MOSFET (Metal Oxide) | TO-3P(N) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 12A (Ta) | 10V | 400mOhm @ 6A, 10V | 5V @ 1mA | 14 nC @ 10 V | ±30V | 720 pF @ 10 V | - | 144W (Tc) |
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