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Email: sales@sic-components.com
Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Voltage - Breakdown (V(BR)GSS) | Current - Drain (Idss) @ Vds (Vgs=0) | Voltage - Cutoff (VGS off) @ Id | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Current Drain (Id) - Max |
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TW048Z65C,S1F | 14.4200 | ![]() |
120 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-4 | SiC (Silicon Carbide Junction Transistor) | TO-247-4L(X) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 40A (Tc) | 18V | 69mOhm @ 20A, 18V | 5V @ 1.6mA | 41 nC @ 18 V | +25V, -10V | 1362 pF @ 400 V | - | 132W (Tc) | |||||||||||||||||||||||||||||
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XPQR3004PB,LXHQ | 6.7900 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerBSFN | XPQR3004 | MOSFET (Metal Oxide) | L-TOGL™ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 40 V | 400A (Ta) | 6V, 10V | 0.3mOhm @ 200A, 10V | 3V @ 1mA | 295 nC @ 10 V | ±20V | 26910 pF @ 10 V | - | 750W (Tc) | ||||||||||||||||||||||||||||
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2SA1020-O,F(J | - | ![]() |
1486 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | |||||||||||||||||||||||||||||||||
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RN1105ACT(TPL3) | - | ![]() |
7215 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN1105 | 100 mW | CST3 | - | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 50 V | 80 mA | 500nA | NPN - Pre-Biased | 150mV @ 250µA, 5mA | 80 @ 10mA, 5V | 2.2 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||||
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S1PA7[UD] | - | ![]() |
1361 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tray | Active | - | 1 (Unlimited) | 190-S1PA7[UD] | EAR99 | 8541.29.0095 | 100 | |||||||||||||||||||||||||||||||||||||||||||||
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2SA965-Y,T6KOJPF(J | - | ![]() |
5039 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA965 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | PNP | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | |||||||||||||||||||||||||||||||||
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TK13A60D(STA4,Q,M) | - | ![]() |
6841 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK13A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 600 V | 13A (Ta) | 10V | 430mOhm @ 6.5A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±30V | 2300 pF @ 25 V | - | 50W (Tc) | ||||||||||||||||||||||||||||
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CUHS15S30,H3F | 0.3700 | ![]() |
50 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 2-SMD, Flat Lead | CUHS15 | Schottky | US2H | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 430 mV @ 1.5 A | 500 µA @ 30 V | 150°C | 1.5A | 200pF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||
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RN1116MFV,L3F | 0.1800 | ![]() |
8 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1116 | 150 mW | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 8,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 4.7 kOhms | 10 kOhms | |||||||||||||||||||||||||||||||
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RN4906,LXHF(CT | 0.4400 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4906 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz, 250MHz | 4.7kOhms | 47kOhms | ||||||||||||||||||||||||||||||||
TK1R5R04PB,LXGQ | 2.6900 | ![]() |
2158 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TK1R5R04 | MOSFET (Metal Oxide) | D2PAK+ | download | 3 (168 Hours) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 40 V | 160A (Ta) | 6V, 10V | 1.5mOhm @ 80A, 10V | 3V @ 500µA | 103 nC @ 10 V | ±20V | 5500 pF @ 10 V | - | 205W (Tc) | ||||||||||||||||||||||||||||||
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RN4904,LF | 0.2800 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4904 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 47kOhms | 47kOhms | |||||||||||||||||||||||||||||||
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2SK209-GR(TE85L,F) | 0.4700 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SK209 | 150 mW | SC-59 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 13pF @ 10V | 50 V | 14 mA @ 10 V | 1.5 V @ 100 nA | 14 mA | |||||||||||||||||||||||||||||||||
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TK17E65W,S1X | 3.2100 | ![]() |
3783 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK17E65 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 17.3A (Ta) | 10V | 200mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 165W (Tc) | ||||||||||||||||||||||||||||
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SSM3K15CT,L3F | - | ![]() |
3038 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-101, SOT-883 | SSM3K15 | MOSFET (Metal Oxide) | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | N-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | ±20V | 7.8 pF @ 3 V | - | 100mW (Ta) | ||||||||||||||||||||||||||||||
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RN2311,LXHF | 0.3900 | ![]() |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN2311 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200 MHz | 10 kOhms | |||||||||||||||||||||||||||||||||
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TK40P03M1(T6RDS-Q) | - | ![]() |
6022 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK40P03 | MOSFET (Metal Oxide) | DPAK | download | RoHS Compliant | 1 (Unlimited) | TK40P03M1T6RDSQ | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 30 V | 40A (Ta) | 4.5V, 10V | 10.8mOhm @ 20A, 10V | 2.3V @ 100µA | 17.5 nC @ 10 V | ±20V | 1150 pF @ 10 V | - | - | |||||||||||||||||||||||||||
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2SK2916(F) | - | ![]() |
6044 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 2SK2916 | MOSFET (Metal Oxide) | TO-3P(N)IS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 14A (Ta) | 10V | 400mOhm @ 7A, 10V | 4V @ 1mA | 58 nC @ 10 V | ±30V | 2600 pF @ 10 V | - | 80W (Tc) | |||||||||||||||||||||||||||||
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HN1D01FE(TE85L,F) | 0.4500 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | HN1D01 | Standard | ES6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 4,000 | Small Signal =< 200mA (Io), Any Speed | 2 Pair Common Anode | 80 V | 100mA | 1.2 V @ 100 mA | 1.6 ns | 500 nA @ 80 V | 150°C (Max) | ||||||||||||||||||||||||||||||||
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TJ8S06M3L(T6L1,NQ) | 1.2600 | ![]() |
9068 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ8S06 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 60 V | 8A (Ta) | 6V, 10V | 104mOhm @ 4A, 10V | 3V @ 1mA | 19 nC @ 10 V | +10V, -20V | 890 pF @ 10 V | - | 27W (Tc) | ||||||||||||||||||||||||||||
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SSM14N956L,EFF | 1.3700 | ![]() |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 14-SMD, No Lead | SSM14 | MOSFET (Metal Oxide) | 1.33W (Ta) | TCSPED-302701 | - | ROHS3 Compliant | 1 (Unlimited) | 10,000 | 2 N-Channel | 12V | 20A (Ta) | 1.35mOhm @ 10A, 4.5V | 1.4V @ 1.57mA | 76nC @ 4V | - | - | ||||||||||||||||||||||||||||||||
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TPN4R203NC,L1Q | 0.4595 | ![]() |
1481 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN4R203 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 23A (Ta) | 4.5V, 10V | 4.2mOhm @ 11.5A, 10V | 2.3V @ 200µA | 24 nC @ 10 V | ±20V | 1370 pF @ 15 V | - | 700mW (Ta), 22W (Tc) | ||||||||||||||||||||||||||||
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2SA1837,YHF(M | - | ![]() |
1662 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1837 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 230 V | 1 A | 1µA (ICBO) | PNP | 1.5V @ 50mA, 500mA | 100 @ 100mA, 5V | 70MHz | |||||||||||||||||||||||||||||||||
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TK8R2A06PL,S4X | 1.0200 | ![]() |
1381 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tube | Active | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TK8R2A06 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 50A (Tc) | 4.5V, 10V | 11.4mOhm @ 8A, 4.5V | 2.5V @ 300µA | 28.4 nC @ 10 V | ±20V | 1990 pF @ 25 V | - | 36W (Tc) | ||||||||||||||||||||||||||||
CRF03(TE85L,Q,M) | - | ![]() |
5105 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOD-123F | CRF03 | Standard | S-FLAT (1.6x3.5) | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 2 V @ 700 mA | 100 ns | 50 µA @ 600 V | -40°C ~ 150°C | 700mA | - | ||||||||||||||||||||||||||||||||
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TPC8129,LQ(S | 0.5600 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | TPC8129 | MOSFET (Metal Oxide) | 8-SOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 30 V | 9A (Ta) | 4.5V, 10V | 22mOhm @ 4.5A, 10V | 2V @ 200µA | 39 nC @ 10 V | +20V, -25V | 1650 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||||||||
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TPN8R903NL,LQ | 0.7400 | ![]() |
8 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN8R903 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 20A (Tc) | 4.5V, 10V | 8.9mOhm @ 10A, 10V | 2.3V @ 100µA | 9.8 nC @ 4.5 V | ±20V | 820 pF @ 15 V | - | 700mW (Ta), 22W (Tc) | ||||||||||||||||||||||||||||
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HN1D01FU,LF(T | 0.4600 | ![]() |
137 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | HN1D01 | Standard | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 2 Pair Common Anode | 80 V | 100mA | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | ||||||||||||||||||||||||||||||||
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RN2906FE,LXHF(CT | 0.3800 | ![]() |
7 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN2906 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 4.7kOhms | 47kOhms | ||||||||||||||||||||||||||||||||
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TBAT54S,LM | 0.2100 | ![]() |
95 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TBAT54 | Schottky | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 1 Pair Series Connection | 30 V | 200mA | 580 mV @ 100 mA | 1.5 ns | 2 µA @ 25 V | -55°C ~ 150°C |
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